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TJ20A10M3(STA4,Q,M Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TJ20A10M3(STA4,Q,MTOSHIBA7990Yes

TJ20A10M3(STA4,Q,M)** is a semiconductor component manufactured by **TOSHIBA**.

The TJ20A10M3(STA4,Q,M) is a semiconductor component manufactured by TOSHIBA. Below are its specifications, descriptions, and features:

Specifications:

  • Manufacturer: TOSHIBA
  • Part Number: TJ20A10M3(STA4,Q,M)
  • Type: Power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor)
  • Voltage Rating: 100V
  • Current Rating: 20A
  • Package Type: TO-220AB (Through-Hole Mounting)
  • Polarity: N-Channel
  • RDS(ON) (Drain-Source On-Resistance): Typically low for efficient power handling
  • Gate Threshold Voltage (VGS(th)): Standard MOSFET range (e.g., 2-4V)
  • Power Dissipation: High power handling capability

Descriptions:

  • A high-performance N-Channel MOSFET designed for power switching applications.
  • Suitable for DC-DC converters, motor control, power supplies, and other high-current switching circuits.
  • Features low on-resistance (RDS(ON)) for reduced power loss and improved efficiency.
  • Robust TO-220AB package for effective heat dissipation.

Features:

  • High Voltage & Current Rating (100V, 20A)
  • Low On-Resistance (RDS(ON)) for minimal conduction losses
  • Fast Switching Speed for efficient power control
  • TO-220AB Package for easy mounting and thermal management
  • Avalanche Energy Rated for improved reliability in high-stress conditions

For exact electrical characteristics and application details, refer to the official TOSHIBA datasheet.

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