Professional IC Distribution & Technical Solutions

The TORX178B is an infrared emitting diode (IRED) manufactured by Toshiba. Below are its specifications, descriptions, and features:

Specifications:

• Type: Infrared Emitting Diode (IRED)
• Wavelength: 850 nm (typical)
• Forward Voltage (Vf): 1.5 V (typical at 50 mA)
• Forward Current (If): 50 mA (standard operating current)
• Peak Forward Current (Ifp): 1 A (pulse)
• Radiant Intensity (Ie): 40 mW/sr (minimum at 50 mA)
• Viewing Angle (2θ½): ±20° (typical)
• Reverse Voltage (Vr): 5 V (maximum)
• Operating Temperature Range: -40°C to +85°C
• Storage Temperature Range: -40°C to +100°C

Description:

• The TORX178B is a high-efficiency GaAlAs infrared LED designed for applications requiring high radiant intensity.
• It is commonly used in remote control systems, optical sensors, and industrial automation.
• The device is housed in a 3-pin plastic package with a molded lens for optimal light emission.

Features:

• High radiant intensity (40 mW/sr min. at 50 mA)
• Narrow viewing angle (±20°) for focused emission
• Reliable GaAlAs material for stable performance
• Low forward voltage (1.5 V typical) for energy efficiency
• Suitable for high-speed modulation (ideal for communication applications)
• Compact and durable package for easy integration

For detailed electrical and optical characteristics, refer to the Toshiba datasheet for the TORX178B.