Professional IC Distribution & Technical Solutions

The TPH1R712MD,L1Q(M) is a power MOSFET manufactured by Toshiba. Below are the factual specifications, descriptions, and features of this component:

Specifications:

• Manufacturer: Toshiba
• Type: N-Channel Power MOSFET
• Package: SOP Advance (8-pin)
• Drain-Source Voltage (V_DSS): 30V
• Continuous Drain Current (I_D): 30A
• Pulsed Drain Current (I_DM): 120A
• Power Dissipation (P_D): 2.5W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(on)): 1.2mΩ (max) at V_GS = 10V
• Threshold Voltage (V_GS(th)): 1.0V (min) to 2.5V (max)
• Input Capacitance (C_iss): 3000pF (typ)
• Output Capacitance (C_oss): 1100pF (typ)
• Reverse Transfer Capacitance (C_rss): 100pF (typ)
• Operating Temperature Range: -55°C to +150°C

Description:

The TPH1R712MD,L1Q(M) is a high-performance N-channel MOSFET designed for power switching applications. It features ultra-low on-resistance (R_DS(on)) for efficient power handling, making it suitable for DC-DC converters, motor drivers, and other high-current applications. The SOP Advance package ensures compact design and improved thermal performance.

Key Features:

• Low On-Resistance: Minimizes conduction losses for high efficiency.
• High Current Capability: Supports up to 30A continuous drain current.
• Fast Switching Performance: Optimized for high-frequency applications.
• Compact Package: SOP Advance (8-pin) for space-saving designs.
• Wide Operating Temperature Range: Suitable for harsh environments.

This MOSFET is commonly used in power management circuits, battery protection, and automotive applications where low R_DS(on) and high current handling are critical.

For detailed datasheets and application notes, refer to Toshiba’s official documentation.