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1SS181,LF(T Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
1SS181,LF(TTOSHIBA174000Yes

Part Number:** SS181,LF(T) **Manufacturer:** TOSHIBA ### **Specifications:** - **Type:** Schottky Barrier Diode - **Configuration:** Single diode - **Maximum Repetitive Peak Reverse Voltage (VRRM):** 80V - **Maximum Average Forward Current

Part Number: SS181,LF(T)

Manufacturer: TOSHIBA

Specifications:

  • Type: Schottky Barrier Diode
  • Configuration: Single diode
  • Maximum Repetitive Peak Reverse Voltage (VRRM): 80V
  • Maximum Average Forward Current (IF(AV)): 1A
  • Peak Forward Surge Current (IFSM): 30A (non-repetitive)
  • Forward Voltage Drop (VF): 0.55V (typical) at 1A
  • Reverse Leakage Current (IR): 100µA (max) at 80V
  • Operating Junction Temperature (TJ): -55°C to +125°C
  • Storage Temperature Range (TSTG): -55°C to +150°C

Descriptions:

  • Package: SOD-123FL (small surface-mount package)
  • Material: Silicon Schottky barrier structure
  • RoHS Compliance: Yes

Features:

  • Low Forward Voltage Drop: Ensures high efficiency in power applications.
  • Fast Switching: Suitable for high-frequency rectification.
  • High Surge Current Capability: Robust performance under transient conditions.
  • Compact Size: Ideal for space-constrained PCB designs.
  • Lead-Free & Halogen-Free: Compliant with environmental regulations.

(Note: Always verify datasheet details for exact application conditions.)

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