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1SS193(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS193(TE85L,F)TOSHIBA39000Yes

SS193(TE85L,F)** is a PNP silicon epitaxial planar transistor manufactured by **TOSHIBA**.

The SS193(TE85L,F) is a PNP silicon epitaxial planar transistor manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCB): -30V
  • Maximum Collector-Emitter Voltage (VCE): -30V
  • Maximum Emitter-Base Voltage (VEB): -5V
  • Maximum Collector Current (IC): -2A
  • Maximum Power Dissipation (PC): 1W
  • Operating Junction Temperature (Tj): -55°C to +150°C
  • DC Current Gain (hFE): 120 to 560 (at VCE = -1V, IC = -150mA)
  • Transition Frequency (fT): 150MHz (Typical)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Epitaxial planar construction ensures high reliability and performance.
  • Suitable for low to medium power applications.

Features:

  • High current gain (hFE) for efficient signal amplification.
  • Fast switching speed due to high transition frequency (fT).
  • Low saturation voltage for improved efficiency in switching circuits.
  • Compact package (TO-92MOD) for space-saving designs.

For detailed electrical characteristics and application notes, refer to the official TOSHIBA datasheet.

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