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1SS226(TE85L,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
1SS226(TE85L,F)Toshiba3000Yes

SS226(TE85L,F)** is a semiconductor device manufactured by **Toshiba**.

The SS226(TE85L,F) is a semiconductor device manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Power MOSFET
  • Polarity: N-Channel
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 30A
  • Pulsed Drain Current (IDM): 120A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.026Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) - 2.5V (max)
  • Input Capacitance (Ciss): 1200pF (typ)
  • Package: TO-220AB

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Suitable for DC-DC converters, motor control, and power management circuits.
  • Low on-resistance ensures minimal power loss.

Features:

  • Low RDS(on) for improved efficiency.
  • Fast switching speed for high-frequency applications.
  • Avalanche energy specified for reliability in harsh conditions.
  • Lead-free and RoHS compliant.

For exact datasheet details, refer to Toshiba's official documentation.

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