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2SA2097(TE16L1,NQ) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA2097(TE16L1,NQ)TOSHIBA6000Yes

2SA2097(TE16L1,NQ)** is a PNP bipolar junction transistor (BJT) manufactured by **TOSHIBA**.

The 2SA2097(TE16L1,NQ) is a PNP bipolar junction transistor (BJT) manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1A
  • Power Dissipation (PC): 1W
  • DC Current Gain (hFE): 120 to 400 (at VCE = -6V, IC = -150mA)
  • Transition Frequency (fT): 200MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-89

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • High current gain (hFE) with low saturation voltage.
  • Suitable for audio and power management circuits.

Features:

  • High fT (200MHz): Ensures good high-frequency performance.
  • Low Noise: Suitable for signal amplification.
  • Compact SOT-89 Package: Space-efficient for PCB designs.

This transistor is commonly used in consumer electronics, audio amplifiers, and power control circuits.

(Note: Always refer to the official Toshiba datasheet for detailed electrical characteristics and application guidelines.)

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