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2SC5712(T2LSONY,ZF Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SC5712(T2LSONY,ZFTOSHIBA90000Yes

2SC5712(T2LSONY,ZF)** is a high-frequency NPN transistor manufactured by **TOSHIBA**.

The 2SC5712(T2LSONY,ZF) is a high-frequency NPN transistor manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: NPN Silicon Epitaxial Planar Transistor
  • Package: SOT-23 (Miniature Surface-Mount Package)
  • Maximum Ratings:
  • Collector-Base Voltage (VCB): 50 V
  • Collector-Emitter Voltage (VCE): 50 V
  • Emitter-Base Voltage (VEB): 5 V
  • Collector Current (IC): 100 mA
  • Total Power Dissipation (Ptot): 150 mW
  • Junction Temperature (Tj): 150 °C
  • Electrical Characteristics:
  • DC Current Gain (hFE): 120 ~ 560 (at VCE = 6 V, IC = 2 mA)
  • Transition Frequency (fT): 6 GHz (Typical)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 0.25 V (Max at IC = 10 mA, IB = 1 mA)

Descriptions & Features:

  • Designed for high-frequency amplification in RF and microwave applications.
  • Suitable for VHF/UHF band amplifiers, oscillators, and mixers in communication devices.
  • Low noise performance, making it ideal for RF signal processing.
  • High-speed switching capability due to its high transition frequency (fT).
  • Compact SOT-23 package for space-constrained PCB designs.

This transistor is commonly used in wireless communication modules, RF circuits, and portable electronic devices.

For detailed datasheet information, refer to TOSHIBA's official documentation.

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