The JDP2S04E(TPH3,F) is a semiconductor device manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:
Specifications:
- Manufacturer: TOSHIBA
- Type: Dual P-Channel MOSFET
- Package: SOP-8 (Small Outline Package)
- Voltage Rating (VDSS): -30V
- Current Rating (ID): -4.0A
- Power Dissipation (PD): 2.0W
- On-Resistance (RDS(ON)):
- 120mΩ (max) @ VGS = -10V
- 150mΩ (max) @ VGS = -4.5V
- Gate Threshold Voltage (VGS(th)): -0.4V to -1.5V
- Operating Temperature Range: -55°C to +150°C
Descriptions:
- The JDP2S04E(TPH3,F) is a dual P-channel MOSFET designed for low-voltage, high-efficiency switching applications.
- It is housed in an SOP-8 package, making it suitable for space-constrained PCB designs.
- The device is optimized for power management in portable electronics, battery protection circuits, and load switching.
Features:
- Low On-Resistance (RDS(ON)): Ensures minimal power loss and high efficiency.
- Dual MOSFET Configuration: Allows for compact circuit designs by integrating two P-channel MOSFETs in a single package.
- Fast Switching Speed: Suitable for high-frequency applications.
- Lead-Free & RoHS Compliant: Meets environmental standards.
This MOSFET is commonly used in power management circuits, DC-DC converters, and battery-powered devices. For exact application details, refer to TOSHIBA’s official datasheet.