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JDP2S04E(TPH3,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
JDP2S04E(TPH3,F)TOSHIBA12000Yes

JDP2S04E(TPH3,F)** is a semiconductor device manufactured by **TOSHIBA**.

The JDP2S04E(TPH3,F) is a semiconductor device manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: TOSHIBA
  • Type: Dual P-Channel MOSFET
  • Package: SOP-8 (Small Outline Package)
  • Voltage Rating (VDSS): -30V
  • Current Rating (ID): -4.0A
  • Power Dissipation (PD): 2.0W
  • On-Resistance (RDS(ON)):
  • 120mΩ (max) @ VGS = -10V
  • 150mΩ (max) @ VGS = -4.5V
  • Gate Threshold Voltage (VGS(th)): -0.4V to -1.5V
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The JDP2S04E(TPH3,F) is a dual P-channel MOSFET designed for low-voltage, high-efficiency switching applications.
  • It is housed in an SOP-8 package, making it suitable for space-constrained PCB designs.
  • The device is optimized for power management in portable electronics, battery protection circuits, and load switching.

Features:

  • Low On-Resistance (RDS(ON)): Ensures minimal power loss and high efficiency.
  • Dual MOSFET Configuration: Allows for compact circuit designs by integrating two P-channel MOSFETs in a single package.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Lead-Free & RoHS Compliant: Meets environmental standards.

This MOSFET is commonly used in power management circuits, DC-DC converters, and battery-powered devices. For exact application details, refer to TOSHIBA’s official datasheet.

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