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TBD62003AFWG(Z,EHZ Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TBD62003AFWG(Z,EHZTOSHIBA17055Yes

TBD62003AFWG(Z,EHZ)** is a high-voltage, high-current Darlington transistor array manufactured by **Toshiba**.

The TBD62003AFWG(Z,EHZ) is a high-voltage, high-current Darlington transistor array manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: Darlington Transistor Array
  • Configuration: 7-channel (7 Darlington pairs in a single package)
  • Output Current (per channel): 500mA (max)
  • Output Voltage (VCEO): 50V (max)
  • Input Voltage (VIH): 2.5V (min)
  • Input Current (per channel): 2.5mA (max)
  • Power Dissipation (PD): 1.25W (per channel)
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: SSOP20

Descriptions:

  • Designed for driving high-current loads such as relays, LEDs, lamps, and motors.
  • Each channel consists of a Darlington pair with built-in suppression diodes for inductive load protection.
  • Suitable for industrial, automotive, and consumer applications.

Features:

  • High Output Current: Capable of driving up to 500mA per channel.
  • Built-in Clamp Diodes: Protects against back EMF from inductive loads.
  • Wide Operating Voltage Range: Supports up to 50V output.
  • Low Input Current Requirement: Compatible with CMOS and TTL logic levels.
  • Compact SSOP20 Package: Space-saving design for PCB applications.

This device is commonly used in applications requiring multiple high-current switching functions with minimal external components.

For detailed electrical characteristics and application notes, refer to the official Toshiba datasheet.

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