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TBD62783AFWG(Z,EHZ Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TBD62783AFWG(Z,EHZTOSHIBA3808Yes

TBD62783AFWG(Z,EHZ)** is a high-voltage, high-current Darlington transistor array manufactured by **Toshiba**.

The TBD62783AFWG(Z,EHZ) is a high-voltage, high-current Darlington transistor array manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Type: 8-Channel Darlington Transistor Array
  • Output Voltage (Max): 50V
  • Output Current (Max): 500mA per channel (sink capability)
  • Input Voltage (Max): 5V (TTL/CMOS compatible)
  • Power Dissipation (Total): 1.5W (Ta = 25°C)
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: SSOP20 (Surface Mount)

Descriptions:

  • The TBD62783AFWG(Z,EHZ) consists of 8 Darlington pairs with common emitters and integrated suppression diodes for inductive load protection.
  • Designed for relay, LED, and lamp drivers, as well as other high-current switching applications.
  • Features TTL/CMOS-compatible inputs for easy interfacing with microcontrollers and logic circuits.
  • Includes built-in clamp diodes for back-EMF protection.

Features:

  • High-Voltage & High-Current Output: Supports up to 50V and 500mA per channel.
  • Low Input Current Requirement: Compatible with 5V logic levels.
  • Integrated Freewheeling Diodes: Protects against inductive kickback.
  • Wide Operating Temperature Range: Suitable for industrial applications.
  • Compact SSOP20 Package: Space-efficient for PCB designs.

This IC is commonly used in automotive, industrial control, and consumer electronics for driving inductive and resistive loads efficiently.

For detailed electrical characteristics, refer to Toshiba’s official datasheet.

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