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TLPN137(TP1,F) Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
TLPN137(TP1,F)TOSHIBA3260Yes

TLPN137(TP1,F)** is a semiconductor component manufactured by **TOSHIBA**.

The TLPN137(TP1,F) is a semiconductor component manufactured by TOSHIBA. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: TOSHIBA
  • Part Number: TLPN137(TP1,F)
  • Type: Phototransistor
  • Package: Surface Mount (SMD)
  • Wavelength Range: Typically 940nm (Infrared)
  • Collector-Emitter Voltage (VCEO): 30V (Max)
  • Emitter-Collector Voltage (VECO): 5V (Max)
  • Collector Current (IC): 20mA (Max)
  • Power Dissipation (PD): 75mW (Max)
  • Operating Temperature Range: -25°C to +85°C

Descriptions:

  • The TLPN137(TP1,F) is a high-sensitivity phototransistor designed for infrared detection.
  • It is optimized for surface-mount applications in compact electronic devices.
  • Commonly used in optical sensors, remote controls, and proximity sensing applications.

Features:

  • High photosensitivity for infrared light (940nm peak).
  • Low dark current for improved signal-to-noise ratio.
  • Compact SMD package for space-constrained PCB designs.
  • Fast response time suitable for pulse detection.

For detailed electrical characteristics and application circuits, refer to the official TOSHIBA datasheet.

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