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12N80L Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
12N80LUTC 3100Yes

12N80L** is a power MOSFET manufactured by **UTC (Unisonic Technologies)**.

The 12N80L is a power MOSFET manufactured by UTC (Unisonic Technologies). Below are the factual specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDSS): 800V
  • Continuous Drain Current (ID): 12A
  • Pulsed Drain Current (IDM): 48A
  • Power Dissipation (PD): 150W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(ON)): 0.65Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 3V (min) – 5V (max)
  • Input Capacitance (Ciss): 1500pF (typ)
  • Output Capacitance (Coss): 300pF (typ)
  • Reverse Transfer Capacitance (Crss): 50pF (typ)
  • Turn-On Delay Time (td(on)): 15ns (typ)
  • Turn-Off Delay Time (td(off)): 60ns (typ)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-220F (Fully Molded)

Description:

The UTC 12N80L is an N-channel enhancement-mode power MOSFET designed for high-voltage, high-speed switching applications. It features low on-resistance, fast switching speed, and improved ruggedness, making it suitable for power supplies, inverters, motor control, and other high-efficiency switching circuits.

Features:

  • High Voltage Capability (800V)
  • Low On-Resistance (RDS(ON))
  • Fast Switching Speed
  • Improved dv/dt Capability
  • 100% Avalanche Tested
  • Lead-Free & RoHS Compliant

This information is based on the manufacturer's datasheet and technical documentation.

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