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2SA1012 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1012UTC10000Yes

TO-220 Plastic-Encapsulate Biploar Transistors

The 2SA1012 is a PNP bipolar junction transistor (BJT) manufactured by Unisonic Technologies (UTC). Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Collector-Base Voltage (VCBO): -50V
  • Collector-Emitter Voltage (VCEO): -50V
  • Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -2A
  • Collector Dissipation (PC): 900mW
  • DC Current Gain (hFE): 60-320 (at IC = 0.5A, VCE = -5V)
  • Transition Frequency (fT): 80MHz
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-92

Descriptions:

  • The 2SA1012 is a general-purpose PNP transistor designed for amplification and switching applications.
  • It is suitable for low to medium power circuits, including audio amplifiers, signal processing, and driver stages.

Features:

  • High current capability (up to 2A).
  • Low saturation voltage for efficient switching.
  • High DC current gain (hFE) for improved amplification.
  • Compact TO-92 package for easy PCB mounting.

This transistor is commonly used as a complementary pair with 2SC1815 or similar NPN transistors.

(Note: Always refer to the official UTC datasheet for detailed electrical characteristics and application guidelines.)

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