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The UT3N06G-AE3-R is a power MOSFET manufactured by Unisonic Technologies (UTC). Below are its key specifications, descriptions, and features:

Specifications:

• Type: N-Channel MOSFET
• Drain-Source Voltage (V_DSS): 60V
• Continuous Drain Current (I_D): 30A
• Pulsed Drain Current (I_DM): 120A
• Power Dissipation (P_D): 50W
• Gate-Source Voltage (V_GS): ±20V
• On-Resistance (R_DS(ON)):
• 30mΩ (at V_GS = 10V)
• 35mΩ (at V_GS = 4.5V)
• Threshold Voltage (V_GS(th)): 2V (min) – 4V (max)
• Input Capacitance (C_iss): 1600pF (typical)
• Output Capacitance (C_oss): 500pF (typical)
• Reverse Transfer Capacitance (C_rss): 100pF (typical)
• Turn-On Delay Time (t_d(on)): 10ns (typical)
• Turn-Off Delay Time (t_d(off)): 30ns (typical)
• Package: TO-252 (DPAK)

Description:

The UT3N06G-AE3-R is a high-performance N-channel MOSFET designed for power management applications. It offers low on-resistance, high current handling, and fast switching speeds, making it suitable for DC-DC converters, motor control, and power switching circuits.

Features:

• Low R_DS(ON) for reduced conduction losses
• Fast switching performance
• High power dissipation capability
• Improved thermal performance
• Lead-free and RoHS compliant

This MOSFET is commonly used in power supplies, battery management, automotive electronics, and industrial applications.

For detailed electrical characteristics and application notes, refer to the official UTC datasheet.