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SI1308EDL-T1-GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI1308EDL-T1-GE3VISHAY7799Yes

SI1308EDL-T1-GE3** is a N-Channel MOSFET manufactured by **Vishay**.

The SI1308EDL-T1-GE3 is a N-Channel MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Vishay
  • Part Number: SI1308EDL-T1-GE3
  • Transistor Type: N-Channel MOSFET
  • Technology: TrenchFET® Gen III
  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 6.3A
  • RDS(ON) (Max) @ VGS = 10V: 30mΩ
  • RDS(ON) (Max) @ VGS = 4.5V: 40mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W
  • Operating Temperature Range: -55°C to +150°C
  • Package: PowerPAK® SC-70-6L

Descriptions:

  • Designed for high-efficiency power switching applications.
  • Features low on-resistance (RDS(ON)) for reduced conduction losses.
  • Optimized for battery-powered and portable devices.
  • TrenchFET® Gen III technology ensures high performance in a compact package.

Features:

  • Low gate charge (QG) for fast switching.
  • Low threshold voltage (VGS(th)) for compatibility with low-voltage drive circuits.
  • AEC-Q101 qualified for automotive applications.
  • Pb-free and RoHS compliant.
  • PowerPAK® SC-70-6L package offers space-saving benefits.

This MOSFET is commonly used in DC-DC converters, load switches, power management circuits, and battery protection systems.

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