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SI1407DL-T1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI1407DL-T1VISHAY2711Yes

Manufacturer:** VISHAY **Part Number:** SI1407DL-T1 ### **Specifications:** - **Type:** Dual N-Channel MOSFET - **Technology:** TrenchFET® - **Drain-Source Voltage (VDS):** 20V - **Gate-Source Voltage (VGS):** ±12V - **Continuous Drain C

Manufacturer: VISHAY

Part Number: SI1407DL-T1

Specifications:

  • Type: Dual N-Channel MOSFET
  • Technology: TrenchFET®
  • Drain-Source Voltage (VDS): 20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): 4.3A (per MOSFET)
  • Power Dissipation (PD): 2W (per MOSFET)
  • On-Resistance (RDS(ON)):
  • 30mΩ (VGS = 4.5V)
  • 22mΩ (VGS = 10V)
  • Package: PowerPAK® SC-70-6L
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

The SI1407DL-T1 is a dual N-channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for load switching, power distribution, and battery management systems.

Features:

  • Low RDS(ON) for reduced conduction losses
  • Optimized for high-density designs
  • Lead-free and RoHS-compliant
  • TrenchFET® technology for improved efficiency
  • Compact PowerPAK® SC-70-6L package

(Note: Always refer to the official datasheet for detailed specifications and application guidelines.)

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