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SI2301CDS-T1-E3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI2301CDS-T1-E3VISHAY1983Yes

SI2301CDS-T1-E3** is a P-channel MOSFET manufactured by **Vishay**.

The SI2301CDS-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Vishay
  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): -2.7A
  • Power Dissipation (PD): 1.25W
  • On-Resistance (RDS(on)): 85mΩ @ VGS = -4.5V
  • Threshold Voltage (VGS(th)): -1V (typical)
  • Package: SOT-23 (TO-236AB)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The SI2301CDS-T1-E3 is a small-signal P-channel MOSFET designed for low-voltage applications.
  • It is optimized for high-efficiency switching and power management in portable electronics, battery protection circuits, and load switching.
  • The device features low on-resistance and fast switching characteristics.

Features:

  • Low On-Resistance (RDS(on)): Ensures minimal power loss.
  • Compact SOT-23 Package: Ideal for space-constrained designs.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Lead (Pb)-Free & RoHS Compliant: Environmentally friendly.
  • AEC-Q101 Qualified: Meets automotive reliability standards.

This MOSFET is commonly used in power management, DC-DC converters, and battery protection circuits.

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