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SI2301DS-T1-E3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI2301DS-T1-E3VISHAY1900Yes

SI2301DS-T1-E3** is a P-channel MOSFET manufactured by **VISHAY**.

The SI2301DS-T1-E3 is a P-channel MOSFET manufactured by VISHAY. Below are the factual specifications, descriptions, and features of the component:

Specifications:

  • Manufacturer: VISHAY
  • Type: P-Channel MOSFET
  • Package: SOT-23 (TO-236AB)
  • Drain-Source Voltage (VDSS): -20V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): -2.7A
  • Pulsed Drain Current (IDM): -10A
  • On-Resistance (RDS(ON)): 85mΩ @ VGS = -4.5V
  • Power Dissipation (PD): 1.25W
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Threshold Voltage (VGS(th)): -0.4V to -1.5V

Descriptions:

  • The SI2301DS-T1-E3 is a P-channel enhancement-mode MOSFET designed for low-voltage, high-speed switching applications.
  • It is housed in a compact SOT-23 package, making it suitable for space-constrained designs.
  • Optimized for low on-resistance and high current handling in power management circuits.

Features:

  • Low Threshold Voltage for efficient switching.
  • High-Speed Switching performance.
  • Low On-Resistance (RDS(ON)) for reduced conduction losses.
  • Lead-Free & RoHS Compliant for environmental safety.
  • AEC-Q101 Qualified for automotive applications.

This information is based on VISHAY's official datasheet for the SI2301DS-T1-E3. For detailed performance curves and application notes, refer to the manufacturer's documentation.

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