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SI2302CDS-T1-GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI2302CDS-T1-GE3VISHAY66000Yes

SI2302CDS-T1-GE3 is a MOSFET manufactured by Vishay.

The SI2302CDS-T1-GE3 is a MOSFET manufactured by Vishay. Below are the factual specifications, descriptions, and features:

Manufacturer:

VISHAY

Part Number:

SI2302CDS-T1-GE3

Description:

N-Channel MOSFET, 20V, 4.1A, 60mΩ

Key Specifications:

  • Drain-Source Voltage (VDS): 20V
  • Continuous Drain Current (ID): 4.1A
  • RDS(ON) (Max) @ VGS=4.5V: 60mΩ
  • RDS(ON) (Max) @ VGS=2.5V: 85mΩ
  • Gate-Source Voltage (VGS): ±8V
  • Power Dissipation (PD): 1.25W
  • Package: SOT-23 (TO-236AB)

Features:

  • Low On-Resistance
  • High-Speed Switching
  • Low Gate Charge
  • ESD Protection
  • Lead-Free and RoHS Compliant

Applications:

  • Power Management
  • DC-DC Converters
  • Load Switching
  • Battery Protection Circuits

This information is based on Vishay's official datasheet for the SI2302CDS-T1-GE3.

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