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SI2304DDS-T1-GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI2304DDS-T1-GE3VISHAY28000Yes

SI2304DDS-T1-GE3** is a P-channel MOSFET manufactured by **VISHAY**.

The SI2304DDS-T1-GE3 is a P-channel MOSFET manufactured by VISHAY. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: VISHAY
  • Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±8V
  • Continuous Drain Current (ID): -4.3A
  • Pulsed Drain Current (IDM): -17A
  • Power Dissipation (PD): 1.25W
  • On-Resistance (RDS(on)): 50mΩ @ VGS = -4.5V
  • Threshold Voltage (VGS(th)): -0.7V to -1.5V
  • Package: PowerPAK® SC-75 (SOT-723)
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for low voltage, high-efficiency switching applications.
  • Optimized for battery-powered circuits and load switching.
  • RoHS compliant and halogen-free.

Features:

  • Low On-Resistance for reduced conduction losses.
  • Fast Switching Speed for improved efficiency.
  • Compact PowerPAK® SC-75 Package for space-constrained designs.
  • AEC-Q101 Qualified for automotive applications.

This MOSFET is commonly used in power management, DC-DC converters, and portable electronics.

For detailed datasheet information, refer to VISHAY’s official documentation.

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