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SI2309CDS-T1-GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI2309CDS-T1-GE3VISHAY46700Yes

Manufacturer:** Vishay **Part Number:** SI2309CDS-T1-GE3 ### **Specifications:** - **Transistor Type:** P-Channel MOSFET - **Drain-Source Voltage (VDS):** -30V - **Continuous Drain Current (ID):** -5.

Manufacturer: Vishay

Part Number: SI2309CDS-T1-GE3

Specifications:

  • Transistor Type: P-Channel MOSFET
  • Drain-Source Voltage (VDS): -30V
  • Continuous Drain Current (ID): -5.7A
  • RDS(ON) (Max): 52mΩ @ VGS = -10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W
  • Operating Temperature Range: -55°C to +150°C
  • Package: PowerPAK® SC-70 (SOT-323)

Descriptions:

The SI2309CDS-T1-GE3 is a P-Channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for load switching, power management, and battery protection circuits.

Features:

  • Low threshold voltage
  • High current handling capability
  • Compact PowerPAK® SC-70 package
  • Lead (Pb)-free and RoHS compliant
  • Halogen-free according to IEC 61249-2-21

This MOSFET is optimized for portable electronics, power supplies, and DC-DC converters.

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