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SI3442BDV-T1-E3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI3442BDV-T1-E3VISHAY731Yes

SI3442BDV-T1-E3 is a P-channel MOSFET manufactured by Vishay.

The SI3442BDV-T1-E3 is a P-channel MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features based on factual data:

Specifications:

  • Manufacturer: Vishay
  • Part Number: SI3442BDV-T1-E3
  • Type: P-Channel MOSFET
  • Technology: TrenchFET® Gen III
  • Drain-Source Voltage (VDSS): -20V
  • Gate-Source Voltage (VGS): ±12V
  • Continuous Drain Current (ID): -5.8A
  • Pulsed Drain Current (IDM): -23A
  • On-Resistance (RDS(on)): 36mΩ (max) at VGS = -4.5V
  • Power Dissipation (PD): 2.5W
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: PowerPAK® SO-8

Descriptions:

  • Designed for high-efficiency power management applications.
  • Utilizes Vishay’s TrenchFET® Gen III technology for low on-resistance and high switching performance.
  • Suitable for load switching, power management, and DC-DC conversion.

Features:

  • Low On-Resistance: Minimizes conduction losses.
  • Fast Switching: Enhances efficiency in power applications.
  • Compact Package: PowerPAK® SO-8 for space-constrained designs.
  • AEC-Q101 Qualified: Suitable for automotive applications.
  • Lead (Pb)-Free & RoHS Compliant: Environmentally friendly.

For detailed datasheet information, refer to Vishay’s official documentation.

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