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SI4435DDY-T1-GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI4435DDY-T1-GE3VISHAY8800Yes

SI4435DDY-T1-GE3** is a power MOSFET manufactured by **Vishay**.

The SI4435DDY-T1-GE3 is a power MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Manufacturer:

  • Vishay

Specifications:

  • Type: N-Channel MOSFET
  • Technology: TrenchFET® Gen IV
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 75A (at TC = 25°C)
  • Pulsed Drain Current (IDM): 300A
  • RDS(ON) (Max):
  • 1.8mΩ (at VGS = 10V)
  • 2.5mΩ (at VGS = 4.5V)
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 147W (at TC = 25°C)
  • Operating Junction Temperature (TJ): -55°C to +175°C
  • Package: PowerPAK® SO-8 (5x6mm)

Descriptions:

  • Designed for high-efficiency power management in applications such as DC-DC converters, motor control, and power supplies.
  • Features low on-resistance and high current handling capability.
  • Optimized for switching applications in compact designs.

Features:

  • Low RDS(ON) for reduced conduction losses.
  • High current capability for power applications.
  • TrenchFET® Gen IV technology for improved efficiency.
  • PowerPAK® SO-8 package for space-saving PCB layouts.
  • AEC-Q101 qualified for automotive applications.

This MOSFET is commonly used in automotive, industrial, and consumer electronics applications requiring high power density and efficiency.

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