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SI4800DY-T1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI4800DY-T1VISHAY4904Yes

SI4800DY-T1** is a power MOSFET manufactured by **Vishay**.

The SI4800DY-T1 is a power MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Specifications

  • Manufacturer: Vishay
  • Part Number: SI4800DY-T1
  • Type: N-Channel Power MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 12A
  • RDS(ON) (Max): 9.5mΩ @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W
  • Package: SO-8 (D2PAK)
  • Operating Temperature Range: -55°C to +150°C

Descriptions

  • The SI4800DY-T1 is a low on-resistance, high-efficiency N-Channel MOSFET designed for power management applications.
  • It is optimized for switching power supplies, DC-DC converters, and motor control circuits.
  • The device features low gate charge and fast switching speeds, making it suitable for high-frequency applications.

Features

  • Low RDS(ON) for reduced conduction losses.
  • High current handling capability (12A continuous drain current).
  • Fast switching performance for improved efficiency.
  • Avalanche energy rated for ruggedness in harsh conditions.
  • Lead-free and RoHS compliant for environmental safety.

This MOSFET is commonly used in battery management systems, load switches, and power distribution circuits.

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