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SI7997DP-T1-GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI7997DP-T1-GE3VISHAY 2926Yes

Manufacturer:** VISHAY **Part Number:** SI7997DP-T1-GE3 ### **Specifications:** - **Transistor Type:** P-Channel MOSFET - **Drain-Source Voltage (VDSS):** -30V - **Continuous Drain Current (ID):** -7.

Manufacturer: VISHAY

Part Number: SI7997DP-T1-GE3

Specifications:

  • Transistor Type: P-Channel MOSFET
  • Drain-Source Voltage (VDSS): -30V
  • Continuous Drain Current (ID): -7.5A
  • RDS(ON) (Max) @ VGS:
  • 18mΩ @ -10V
  • 24mΩ @ -4.5V
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 2.5W
  • Operating Temperature Range: -55°C to +150°C
  • Package: PowerPAK® SO-8

Descriptions:

The SI7997DP-T1-GE3 is a P-Channel MOSFET designed for high-efficiency power management applications. It features low on-resistance and fast switching performance, making it suitable for load switching, DC-DC conversion, and battery protection circuits.

Features:

  • Low RDS(ON) for reduced conduction losses
  • Optimized for high-frequency switching
  • Lead-free and RoHS compliant
  • PowerPAK® SO-8 package for improved thermal performance
  • Halogen-free according to IEC 61249-2-21

This MOSFET is commonly used in power supplies, motor control, and portable electronics.

(Note: Always refer to the official datasheet for detailed specifications.)

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