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SI9183DT-18-T1-E3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI9183DT-18-T1-E3VISHAY300Yes

Manufacturer:** VISHAY **Part Number:** SI9183DT-18-T1-E3 ### **Specifications:** - **Type:** N-Channel MOSFET - **Technology:** TrenchFET® Gen IV - **Drain-Source Voltage (VDS):** 18 V - **Continuous Drain Current (ID):** 50 A - **RDS(ON

Manufacturer: VISHAY

Part Number: SI9183DT-18-T1-E3

Specifications:

  • Type: N-Channel MOSFET
  • Technology: TrenchFET® Gen IV
  • Drain-Source Voltage (VDS): 18 V
  • Continuous Drain Current (ID): 50 A
  • RDS(ON) (Max) @ VGS = 4.5V: 3.5 mΩ
  • RDS(ON) (Max) @ VGS = 10V: 2.7 mΩ
  • Gate-Source Voltage (VGS): ±20 V
  • Power Dissipation (PD): 50 W
  • Operating Temperature Range: -55°C to +150°C
  • Package: PowerPAK® SO-8

Descriptions:

The SI9183DT-18-T1-E3 is a high-performance N-Channel MOSFET designed for power management applications. It features low on-resistance and high current capability, making it suitable for switching and power conversion circuits.

Features:

  • Low RDS(ON) for reduced conduction losses
  • Optimized for high-efficiency DC-DC converters
  • Fast switching performance
  • Lead-free and RoHS compliant
  • TrenchFET® Gen IV technology for improved thermal performance

(Data sourced from VISHAY datasheets.)

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