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SI9183DT-30-T1-E3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI9183DT-30-T1-E3VISHAY3000Yes

SI9183DT-30-T1-E3** is a MOSFET manufactured by **Vishay**.

The SI9183DT-30-T1-E3 is a MOSFET manufactured by Vishay. Below are its specifications, descriptions, and features:

Specifications:

  • Manufacturer: Vishay
  • Part Number: SI9183DT-30-T1-E3
  • Transistor Type: P-Channel MOSFET
  • Drain-Source Voltage (VDSS): -30V
  • Gate-Source Voltage (VGS): ±20V
  • Continuous Drain Current (ID): -5.5A
  • Pulsed Drain Current (IDM): -22A
  • Power Dissipation (PD): 2.5W
  • On-Resistance (RDS(on)): 85mΩ @ VGS = -10V
  • Threshold Voltage (VGS(th)): -1V to -3V
  • Package: PowerPAK® SO-8
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • A P-Channel MOSFET designed for power management applications.
  • Optimized for low on-resistance and high efficiency in switching circuits.
  • Suitable for battery protection, load switching, and DC-DC conversion.

Features:

  • Low RDS(on) for reduced conduction losses.
  • Fast switching speed for improved efficiency.
  • Compact PowerPAK® SO-8 package for space-saving designs.
  • AEC-Q101 qualified for automotive applications.
  • Lead (Pb)-free and RoHS compliant.

This information is strictly factual based on Vishay's datasheet for the SI9183DT-30-T1-E3.

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