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SQ2361AEES-T1_GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SQ2361AEES-T1_GE3VISHAY14860Yes

Manufacturer:** VISHAY **Part Number:** SQ2361AEES-T1_GE3 **Descriptions:** - **Type:** N-Channel MOSFET - **Technology:** TrenchFET® Gen III - **Package:** PowerPAK® SO-8 **Features:** - **Voltage Rating (VDS):** 30V - **Current Rati

Manufacturer: VISHAY

Part Number: SQ2361AEES-T1_GE3

Descriptions:

  • Type: N-Channel MOSFET
  • Technology: TrenchFET® Gen III
  • Package: PowerPAK® SO-8

Features:

  • Voltage Rating (VDS): 30V
  • Current Rating (ID): 6.3A (continuous)
  • RDS(ON) (Max): 36mΩ @ VGS = 10V
  • Gate-Source Voltage (VGS): ±20V
  • Low Gate Charge (Qg): 6.5nC (typical)
  • Low Thermal Resistance: Optimized for power dissipation
  • AEC-Q101 Qualified: Suitable for automotive applications
  • RoHS Compliant: Lead-free and halogen-free

This MOSFET is designed for high-efficiency power management in applications such as DC-DC converters, motor control, and load switching.

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