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Si3430DV-T1-GE3 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
Si3430DV-T1-GE3VISHAY6000Yes

Si3430DV-T1-GE3** is a **P-Channel MOSFET** manufactured by **Vishay**.

The Si3430DV-T1-GE3 is a P-Channel MOSFET manufactured by Vishay. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Vishay
  • Part Number: Si3430DV-T1-GE3
  • Type: P-Channel MOSFET
  • Technology: Silicon (Si)
  • Drain-Source Voltage (VDSS): -30 V
  • Gate-Source Voltage (VGS): ±20 V
  • Continuous Drain Current (ID): -5.7 A
  • Pulsed Drain Current (IDM): -20 A
  • Power Dissipation (PD): 2.5 W
  • On-Resistance (RDS(on)): 50 mΩ (max) at VGS = -10 V
  • Threshold Voltage (VGS(th)): -1 V to -3 V
  • Package: PowerPAK® SO-8
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • Designed for high-efficiency power management in applications requiring low on-resistance and fast switching.
  • Suitable for DC-DC converters, load switches, and battery management systems.
  • Features enhanced thermal performance due to the PowerPAK® SO-8 package.

Features:

  • Low On-Resistance (RDS(on)) for reduced conduction losses.
  • Fast Switching Speed for improved efficiency in high-frequency applications.
  • Avalanche Energy Rated for ruggedness in demanding conditions.
  • Lead (Pb)-Free & RoHS Compliant for environmental safety.
  • Optimized for Low Gate Drive Requirements (VGS = -4.5 V or -10 V).

This MOSFET is commonly used in portable electronics, power supplies, and automotive applications.

(Note: Always refer to the official Vishay datasheet for detailed electrical characteristics and application guidelines.)

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