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2SC2009 Specifications

Detailed technical information and Application Scenarios

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PartNumberManufactorQuantityAvailability
2SC2009165Yes

2SC2009** is a high-power NPN silicon transistor designed for general-purpose amplification and switching applications.

The 2SC2009 is a high-power NPN silicon transistor designed for general-purpose amplification and switching applications. Below are the manufacturer specifications, descriptions, and features:

Manufacturer Specifications:

  • Transistor Type: NPN
  • Maximum Collector-Base Voltage (VCBO): 150V
  • Maximum Collector-Emitter Voltage (VCEO): 100V
  • Maximum Emitter-Base Voltage (VEBO): 5V
  • Maximum Collector Current (IC): 2A
  • Maximum Power Dissipation (Pc): 25W
  • Transition Frequency (fT): 20MHz
  • DC Current Gain (hFE): 40 to 320 (depending on operating conditions)
  • Operating Temperature Range: -55°C to +150°C
  • Package Type: TO-220

Descriptions:

The 2SC2009 is a robust bipolar junction transistor (BJT) suitable for power amplification and switching in various electronic circuits. It is commonly used in audio amplifiers, power supplies, and motor control applications due to its high current and voltage handling capabilities.

Features:

  • High Power Handling: Capable of dissipating up to 25W.
  • High Voltage Tolerance: Supports up to 100V between collector and emitter.
  • Medium-Speed Switching: Transition frequency of 20MHz for moderate-speed applications.
  • Wide hFE Range: Provides flexibility in amplification applications.
  • TO-220 Package: Ensures efficient heat dissipation and easy mounting.

This transistor is often used in conjunction with complementary PNP transistors (such as the 2SA953) in push-pull amplifier configurations.

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