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IRFD113 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
IRFD113IR/HARRIS365Yes

IRFD113 is a power MOSFET manufactured by International Rectifier (IR), now part of Harris Corporation.

The IRFD113 is a power MOSFET manufactured by International Rectifier (IR), now part of Harris Corporation.

Specifications:

  • Manufacturer: IR (International Rectifier) / Harris
  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 60V
  • Continuous Drain Current (ID): 0.5A
  • Power Dissipation (PD): 1W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 5Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V (min), 2V (typ), 3V (max)
  • Input Capacitance (Ciss): 20pF (typ)
  • Output Capacitance (Coss): 10pF (typ)
  • Reverse Transfer Capacitance (Crss): 5pF (typ)
  • Turn-On Delay Time (td(on)): 10ns (typ)
  • Turn-Off Delay Time (td(off)): 30ns (typ)
  • Package: TO-236 (SOT-23)

Descriptions & Features:

  • Designed for low-power switching applications.
  • Fast switching speed.
  • Low gate charge for efficient drive.
  • Suitable for battery-powered circuits and small-signal amplification.
  • Compact SOT-23 package for space-constrained designs.

This information is based on the manufacturer's datasheet. For detailed performance characteristics, refer to the official documentation.

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