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LBAS70-04LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LBAS70-04LT1GLRC8970Yes

LBAS70-04LT1G** is a high-performance Schottky barrier diode manufactured by **LRC (Leshan Radio Company)**.

The LBAS70-04LT1G is a high-performance Schottky barrier diode manufactured by LRC (Leshan Radio Company).

Specifications:

  • Type: Schottky Diode
  • Configuration: Dual Common Cathode
  • Maximum Reverse Voltage (VR): 40V
  • Average Rectified Current (IO): 500mA
  • Forward Voltage (VF): 0.5V (typical at 1mA)
  • Reverse Leakage Current (IR): 0.5µA (typical at 20V)
  • Operating Temperature Range: -55°C to +125°C
  • Package: SOT-23 (Small Outline Transistor)

Descriptions & Features:

  • Low Forward Voltage Drop: Ensures efficient power conversion.
  • Fast Switching Speed: Suitable for high-frequency applications.
  • Dual Diode Configuration: Common cathode arrangement for compact circuit design.
  • High Surge Current Capability: Robust performance under transient conditions.
  • Lead-Free & RoHS Compliant: Environmentally friendly manufacturing.

This diode is commonly used in power management, signal clamping, reverse polarity protection, and high-speed switching circuits.

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