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VN1008L Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
VN1008L486Yes

VN1008L** is a **Power MOSFET** manufactured by **STMicroelectronics**.

The VN1008L is a Power MOSFET manufactured by STMicroelectronics.

Key Specifications:

  • Type: N-Channel Enhancement Mode MOSFET
  • Drain-Source Voltage (VDSS): 100V
  • Continuous Drain Current (ID): 8A
  • Pulsed Drain Current (IDM): 32A
  • Power Dissipation (PD): 30W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.3Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2V (min) - 4V (max)
  • Package: TO-252 (DPAK)

Features:

  • Low On-Resistance for efficient power handling
  • Fast Switching Speed for high-frequency applications
  • Avalanche Energy Specified for ruggedness in inductive loads
  • Logic-Level Gate Drive (compatible with 5V drive)
  • Low Gate Charge for improved switching efficiency

Applications:

  • Power switching in DC-DC converters
  • Motor control circuits
  • Automotive and industrial systems
  • Load switching and power management

This MOSFET is designed for high-efficiency power control in various electronic systems.

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