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2SA1179-M6 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2SA1179-M6400Yes

2SA1179-M6** is a PNP bipolar junction transistor (BJT) manufactured by **Toshiba**.

The 2SA1179-M6 is a PNP bipolar junction transistor (BJT) manufactured by Toshiba. Below are its key specifications, descriptions, and features:

Specifications:

  • Transistor Type: PNP
  • Maximum Collector-Base Voltage (VCBO): -50V
  • Maximum Collector-Emitter Voltage (VCEO): -50V
  • Maximum Emitter-Base Voltage (VEBO): -5V
  • Collector Current (IC): -1.5A
  • Collector Dissipation (PC): 1W
  • DC Current Gain (hFE): 60 to 320 (at IC = -150mA, VCE = -5V)
  • Transition Frequency (fT): 100MHz (Typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-92 (Miniature plastic mold)

Descriptions:

  • Designed for general-purpose amplification and switching applications.
  • Suitable for low to medium power circuits.
  • Features high current gain and good frequency response.

Features:

  • High hFE (DC Current Gain) for improved amplification.
  • Low saturation voltage for efficient switching.
  • Compact TO-92 package for easy PCB mounting.
  • Wide operating temperature range for reliability in various environments.

This transistor is commonly used in audio amplifiers, signal processing, and power management circuits. For exact performance characteristics, refer to the official Toshiba datasheet.

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