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BC817-40LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BC817-40LT1GONSEMI12654Yes

BC817-40LT1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **ON Semiconductor**.

The BC817-40LT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by ON Semiconductor.

Specifications:

  • Transistor Type: NPN
  • Collector-Emitter Voltage (VCEO): 45V
  • Collector-Base Voltage (VCBO): 50V
  • Emitter-Base Voltage (VEBO): 5V
  • Continuous Collector Current (IC): 500mA
  • Total Power Dissipation (PD): 300mW
  • DC Current Gain (hFE): 250–600 (at IC = 2mA, VCE = 1V)
  • Transition Frequency (fT): 100MHz (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: SOT-23 (3-Lead)

Descriptions:

The BC817-40LT1G is a small-signal NPN transistor designed for general-purpose amplification and switching applications. It is optimized for high current gain and fast switching performance, making it suitable for low-power circuits.

Features:

  • High current gain (hFE) range
  • Low saturation voltage
  • Fast switching speed
  • Compact SOT-23 package for space-constrained designs
  • Pb-free and RoHS compliant

This transistor is commonly used in amplifiers, signal processing, and switching circuits in consumer electronics, industrial controls, and automotive applications.

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