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L9013QLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
L9013QLT1GLRC11800Yes

L9013QLT1G** is a semiconductor device manufactured by **LRC (Leshan Radio Company)**.

The L9013QLT1G is a semiconductor device manufactured by LRC (Leshan Radio Company). Below are its specifications, descriptions, and features:

Manufacturer:

  • LRC (Leshan Radio Company)

Specifications:

  • Type: NPN Transistor
  • Package: SOT-23
  • Collector-Base Voltage (VCBO): 40V
  • Collector-Emitter Voltage (VCEO): 25V
  • Emitter-Base Voltage (VEBO): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 300mW
  • DC Current Gain (hFE): 60-400 (depending on conditions)
  • Transition Frequency (fT): 150MHz
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The L9013QLT1G is a general-purpose NPN bipolar junction transistor (BJT) in a compact SOT-23 package.
  • Suitable for amplification and switching applications in low-power circuits.
  • Commonly used in consumer electronics, signal processing, and driver circuits.

Features:

  • Low saturation voltage for efficient switching.
  • High current gain (hFE) for improved amplification.
  • Compact SOT-23 package for space-constrained designs.
  • RoHS compliant for environmental safety.

For detailed electrical characteristics, refer to the official datasheet from LRC.

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