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LMUN2235LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LMUN2235LT1GLRC5220Yes

LMUN2235LT1G** is a dual common-emitter NPN transistor array manufactured by **ON Semiconductor (LRC)**.

The LMUN2235LT1G is a dual common-emitter NPN transistor array manufactured by ON Semiconductor (LRC).

Specifications:

  • Type: Dual NPN Bipolar Transistor
  • Configuration: Common-Emitter
  • Maximum Collector-Base Voltage (VCB): 50V
  • Maximum Collector-Emitter Voltage (VCE): 50V
  • Maximum Emitter-Base Voltage (VEB): 5V
  • Continuous Collector Current (IC): 100mA per transistor
  • Total Power Dissipation (Ptot): 200mW
  • DC Current Gain (hFE): 100 to 300 (at IC = 10mA, VCE = 1V)
  • Transition Frequency (fT): 250MHz (typical)
  • Package: SOT-23-6 (SC-74)

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • Low saturation voltage for efficient switching.
  • Matched pair transistors for improved performance in differential circuits.
  • Suitable for high-speed switching and signal processing.
  • RoHS compliant and lead-free.

This device is commonly used in applications such as signal amplification, logic level shifting, and driver circuits.

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