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MJD122T4G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MJD122T4GONSEMI13150Yes

MJD122T4G is a power transistor manufactured by ONSEMI.

The MJD122T4G is a power transistor manufactured by ONSEMI. Below are its specifications, descriptions, and features:

Specifications:

  • Manufacturer: ONSEMI
  • Type: NPN Bipolar Junction Transistor (BJT)
  • Package: DPAK (TO-252)
  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 8A (continuous)
  • Power Dissipation (PD): 36W
  • DC Current Gain (hFE): 30 to 250 (at IC = 3A, VCE = 4V)
  • Collector-Emitter Saturation Voltage (VCE(sat)): 1.5V (max) at IC = 8A, IB = 0.8A
  • Transition Frequency (fT): 3MHz (typical)
  • Operating Temperature Range: -65°C to +150°C

Description:

The MJD122T4G is a high-voltage, high-current NPN transistor designed for power switching and amplification applications. It is housed in a DPAK (TO-252) surface-mount package, making it suitable for compact and efficient PCB designs.

Features:

  • High current capability (8A continuous)
  • Low collector-emitter saturation voltage
  • High DC current gain
  • Suitable for power switching and linear amplification
  • Surface-mount package for space-saving designs

This transistor is commonly used in power supplies, motor control, and other high-power switching applications.

(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)

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