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MMBD7000LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MMBD7000LT1GONSEMI87000Yes

MMBD7000LT1G** is a dual series switching diode manufactured by **ON Semiconductor**.

The MMBD7000LT1G is a dual series switching diode manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: ON Semiconductor
  • Diode Type: Dual Series Switching Diode
  • Package: SOT-23 (3-Lead)
  • Maximum Reverse Voltage (VR): 70V
  • Forward Continuous Current (IF): 200mA
  • Peak Forward Surge Current (IFSM): 500mA (non-repetitive)
  • Forward Voltage Drop (VF): 1V (at 10mA)
  • Reverse Leakage Current (IR): 100nA (max at 70V)
  • Power Dissipation (PD): 225mW
  • Operating Temperature Range: -55°C to +150°C

Descriptions:

  • The MMBD7000LT1G consists of two high-speed switching diodes in a single SOT-23 package.
  • It is designed for general-purpose switching applications, signal processing, and protection circuits.
  • The device offers low leakage current and fast switching performance.

Features:

  • Dual Diode Configuration: Two diodes in series within a single package.
  • High-Speed Switching: Suitable for fast switching applications.
  • Low Leakage Current: Ensures minimal power loss in reverse bias.
  • Small Form Factor: Compact SOT-23 package for space-constrained designs.
  • RoHS Compliant: Meets environmental standards.

This diode is commonly used in signal clamping, protection circuits, and high-frequency switching applications.

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