Antiuav Chips and Transistors

NDS331N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumber	Manufactor	Quantity	Availability
NDS331N	ONSEMI	8602	Yes

N-Channel Logic Level Enhancement Mode Field Effect Transistor

The NDS331N is a P-channel MOSFET manufactured by ONSEMI. Below are its key specifications, descriptions, and features:

Specifications:

Drain-Source Voltage (V_DS): -30V
Gate-Source Voltage (V_GS): ±20V
Continuous Drain Current (I_D): -4.3A
Pulsed Drain Current (I_DM): -16A
Power Dissipation (P_D): 1.4W (at 25°C)
On-Resistance (R_DS(on)): 85mΩ (max) at V_GS = -10V
Threshold Voltage (V_GS(th)): -1V to -3V
Input Capacitance (C_iss): 300pF (typical)
Operating Junction Temperature (T_J): -55°C to +150°C
Package: SOT-23

Descriptions:

The NDS331N is a P-channel enhancement-mode MOSFET designed for low-voltage, high-efficiency switching applications. It is commonly used in power management, load switching, and DC-DC conversion circuits.

Features:

Low On-Resistance: Ensures minimal power loss.
Fast Switching Speed: Suitable for high-frequency applications.
Small Form Factor: SOT-23 package for space-constrained designs.
Low Gate Charge: Enhances switching efficiency.
RoHS Compliant: Environmentally friendly.

This information is based on ONSEMI's official datasheet for the NDS331N.

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