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2N7000 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
2N7000MOTO/PHI266Yes

2N7000 is a N-channel enhancement mode Field Effect Transistor (FET) manufactured by Infineon Technologies.

The 2N7000 is a N-channel enhancement mode Field Effect Transistor (FET) manufactured by Infineon Technologies. Here are the key specifications:

  • Drain-Source Voltage (V_DS): 60V
  • Gate-Source Voltage (V_GS): ±20V
  • Drain Current (I_D): 200mA
  • Total Power Dissipation (P_tot): 350mW
  • Operating Junction Temperature (T_j): -55°C to +150°C
  • Gate Threshold Voltage (V_GS(th)): 0.8V to 3V
  • Drain-Source On-Resistance (R_DS(on)): 5Ω (max) at V_GS = 10V, I_D = 200mA
  • Input Capacitance (C_iss): 50pF (typ) at V_DS = 25V, V_GS = 0V
  • Output Capacitance (C_oss): 15pF (typ) at V_DS = 25V, V_GS = 0V
  • Reverse Transfer Capacitance (C_rss): 5pF (typ) at V_DS = 25V, V_GS = 0V
  • Turn-On Delay Time (t_d(on)): 10ns (typ) at V_DS = 30V, I_D = 200mA, V_GS = 10V
  • Turn-Off Delay Time (t_d(off)): 30ns (typ) at V_DS = 30V, I_D = 200mA, V_GS = 10V
  • Package: TO-92

These specifications are based on typical operating conditions and may vary depending on the specific application and environmental conditions.

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