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FT839ND1 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FT839ND1FMD550Yes

FT839ND1 is a high-performance N-channel MOSFET manufactured by FMD (Fortune Microelectronics Corporation).

The FT839ND1 is a high-performance N-channel MOSFET manufactured by FMD (Fortune Microelectronics Corporation). Below are the factual specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 60A
  • Pulsed Drain Current (IDM): 240A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 3.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) - 2.5V (max)
  • Input Capacitance (Ciss): 2700pF (typ)
  • Output Capacitance (Coss): 800pF (typ)
  • Reverse Transfer Capacitance (Crss): 60pF (typ)
  • Package: TO-252 (DPAK)

Descriptions:

The FT839ND1 is designed for high-efficiency power switching applications, offering low on-resistance and fast switching performance. It is suitable for power management in DC-DC converters, motor control, and battery protection circuits.

Features:

  • Low RDS(on) for reduced conduction losses
  • High current handling capability
  • Fast switching speed
  • Low gate charge for improved efficiency
  • RoHS compliant
  • Lead-free and halogen-free

This MOSFET is optimized for applications requiring high power density and thermal performance.

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