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LBSS84LT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
LBSS84LT1GLRC27000Yes

LBSS84LT1G** is a **P-channel enhancement mode MOSFET** manufactured by **ON Semiconductor**.

The LBSS84LT1G is a P-channel enhancement mode MOSFET manufactured by ON Semiconductor.

Key Specifications:

  • Voltage Ratings:
  • Drain-Source Voltage (VDS): -20V
  • Gate-Source Voltage (VGS): ±8V
  • Current Ratings:
  • Continuous Drain Current (ID): -1.3A
  • Pulsed Drain Current (IDM): -4A
  • On-Resistance (RDS(on)):
  • 0.27Ω (max) @ VGS = -4.5V, ID = -1.3A
  • 0.35Ω (max) @ VGS = -2.5V, ID = -0.9A
  • Power Dissipation (PD): 0.8W
  • Threshold Voltage (VGS(th)): -0.7V to -1.5V
  • Package: SOT-23 (TO-236AB)

Descriptions & Features:

  • Designed for low-voltage, high-speed switching applications.
  • Low on-resistance for efficient power management.
  • Fast switching speeds for improved performance.
  • Lead-free and RoHS compliant.
  • AEC-Q101 qualified for automotive applications.
  • Suitable for load switching, power management, and battery protection circuits.

This MOSFET is commonly used in portable electronics, power supplies, and automotive systems.

(Note: Always refer to the official datasheet for detailed specifications and application guidelines.)

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