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MDE1991RH Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MDE1991RHMAGNACHIP4800Yes

MDE1991RH** is a semiconductor component manufactured by **Magnachip Semiconductor**.

The MDE1991RH is a semiconductor component manufactured by Magnachip Semiconductor. Below are the factual specifications, descriptions, and features:

Specifications:

  • Manufacturer: Magnachip Semiconductor
  • Type: Power MOSFET
  • Package: TO-252 (DPAK)
  • Polarity: N-Channel
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 60A
  • Power Dissipation (PD): 50W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 4.5mΩ (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V (min) - 2.5V (max)

Descriptions:

  • The MDE1991RH is a high-performance N-Channel MOSFET designed for power management applications.
  • It is optimized for low on-resistance and high current handling, making it suitable for switching and power conversion circuits.
  • The TO-252 (DPAK) package provides efficient thermal dissipation.

Features:

  • Low RDS(on) for reduced conduction losses.
  • High current capability (60A continuous drain current).
  • Fast switching performance for efficient power conversion.
  • Avalanche energy rated for ruggedness in demanding applications.
  • Lead-free and RoHS compliant.

This information is based on manufacturer datasheets and technical documentation. For detailed application guidelines, refer to Magnachip's official resources.

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