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BD20B23 Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
BD20B23TNK300Yes

BD20B23** is a power MOSFET manufactured by **TNK**.

The BD20B23 is a power MOSFET manufactured by TNK. Below are the factual specifications, descriptions, and features:

Specifications:

  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 200V
  • Continuous Drain Current (ID): 20A
  • Pulsed Drain Current (IDM): 80A
  • Power Dissipation (PD): 125W
  • Gate-Source Voltage (VGS): ±20V
  • On-Resistance (RDS(on)): 0.23Ω (max) @ VGS = 10V
  • Threshold Voltage (VGS(th)): 2-4V
  • Input Capacitance (Ciss): 1200pF (typ)
  • Output Capacitance (Coss): 300pF (typ)
  • Reverse Transfer Capacitance (Crss): 50pF (typ)
  • Turn-On Delay Time (td(on)): 15ns (typ)
  • Turn-Off Delay Time (td(off)): 50ns (typ)
  • Package: TO-220

Description:

The BD20B23 is a high-voltage N-Channel MOSFET designed for power switching applications. It offers low on-resistance and fast switching performance, making it suitable for power supplies, motor control, and inverters.

Features:

  • High Voltage Capability (200V)
  • Low On-Resistance (0.23Ω max)
  • Fast Switching Speed
  • Low Gate Charge
  • Avalanche Energy Specified
  • TO-220 Package for Easy Mounting

This information is based on the manufacturer's datasheet and technical documentation.

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