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SI4800BDY Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
SI4800BDY128Yes

SI4800BDY is a power MOSFET manufactured by Siliconix (now part of Vishay).

The SI4800BDY is a power MOSFET manufactured by Siliconix (now part of Vishay). Below are its key specifications, descriptions, and features:

Specifications:

  • Manufacturer: Siliconix (Vishay)
  • Type: N-Channel MOSFET
  • Drain-Source Voltage (VDSS): 30V
  • Continuous Drain Current (ID): 12A
  • Pulsed Drain Current (IDM): 48A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 50W
  • On-Resistance (RDS(on)): 0.018Ω (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1V to 2.5V
  • Input Capacitance (Ciss): 1800pF
  • Output Capacitance (Coss): 600pF
  • Reverse Transfer Capacitance (Crss): 150pF
  • Switching Speed: Fast switching capability
  • Package: TO-252 (DPAK)

Descriptions:

  • The SI4800BDY is a high-performance N-channel MOSFET designed for power management applications.
  • It features low on-resistance and high current handling, making it suitable for switching and amplification in power circuits.
  • The device is optimized for efficiency in DC-DC converters, motor control, and battery management systems.

Features:

  • Low RDS(on): Enhances power efficiency.
  • High Current Capability: Supports up to 12A continuous drain current.
  • Fast Switching: Suitable for high-frequency applications.
  • Robust Thermal Performance: TO-252 package provides effective heat dissipation.
  • Avalanche Energy Rated: Ensures reliability under transient conditions.

For detailed datasheet information, refer to Vishay/Siliconix documentation.

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