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FDN337N Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
FDN337NONSEMI24000Yes

N-Channel Logic Level Enhancement Mode Field Effect Transistor

The FDN337N is an N-channel MOSFET manufactured by ON Semiconductor. Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 2.7A
  • Pulsed Drain Current (IDM): 10A
  • Gate-Source Voltage (VGS): ±20V
  • Power Dissipation (PD): 1.1W
  • On-Resistance (RDS(on)): 50mΩ (max) at VGS = 10V
  • Threshold Voltage (VGS(th)): 1.0V to 2.5V
  • Input Capacitance (Ciss): 300pF (typ)
  • Output Capacitance (Coss): 90pF (typ)
  • Reverse Transfer Capacitance (Crss): 30pF (typ)
  • Operating Junction Temperature (TJ): -55°C to +150°C
  • Package: SOT-23 (3-pin)

Description:

The FDN337N is a low-voltage, logic-level N-channel MOSFET designed for high-efficiency switching applications. It features low on-resistance and fast switching speeds, making it suitable for power management, DC-DC converters, and load switching in portable electronics.

Features:

  • Low On-Resistance (RDS(on)) for reduced conduction losses.
  • Logic-Level Gate Drive (fully enhanced at 4.5V).
  • Fast Switching Speed for high-frequency applications.
  • Low Gate Charge (QG) for improved efficiency.
  • ESD Protection (HBM: 2kV).
  • Pb-Free and RoHS Compliant.

This MOSFET is commonly used in battery-powered devices, power supplies, motor control, and other low-voltage switching circuits.

(Note: For detailed application guidelines, refer to the official datasheet from ON Semiconductor.)

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