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MDF4N60B Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
MDF4N60BMagnaCh398Yes

MDF4N60B** is a power MOSFET manufactured by **MagnaChip Semiconductor (MagnaCh)**.

The MDF4N60B is a power MOSFET manufactured by MagnaChip Semiconductor (MagnaCh). Below are its key specifications, descriptions, and features:

Specifications:

  • Drain-Source Voltage (VDSS): 600V
  • Continuous Drain Current (ID): 4A
  • Pulsed Drain Current (IDM): 16A
  • Power Dissipation (PD): 38W
  • Gate-Source Voltage (VGS): ±30V
  • On-Resistance (RDS(on)): 2.5Ω (max) @ VGS = 10V
  • Input Capacitance (Ciss): 350pF (typical)
  • Output Capacitance (Coss): 45pF (typical)
  • Reverse Transfer Capacitance (Crss): 10pF (typical)
  • Turn-On Delay Time (td(on)): 12ns (typical)
  • Turn-Off Delay Time (td(off)): 40ns (typical)
  • Operating Temperature Range: -55°C to +150°C
  • Package: TO-252 (DPAK)

Descriptions:

  • The MDF4N60B is an N-channel MOSFET designed for high-voltage, high-speed switching applications.
  • It is optimized for efficiency in power supplies, motor control, and other power management circuits.
  • The device features low gate charge and fast switching performance.

Features:

  • High Voltage Capability: 600V breakdown voltage for robust performance.
  • Low On-Resistance: Minimizes conduction losses.
  • Fast Switching Speed: Enhances efficiency in high-frequency applications.
  • Avalanche Energy Rated: Improves reliability in inductive load conditions.
  • Lead-Free & RoHS Compliant: Meets environmental standards.

This MOSFET is commonly used in SMPS (Switched-Mode Power Supplies), inverters, LED drivers, and industrial power systems.

*(Note: Always refer to the official datasheet for detailed electrical characteristics and application guidelines.)*

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