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L8050QLT1G Specifications

Detailed technical information and Application Scenarios

Product Details

PartNumberManufactorQuantityAvailability
L8050QLT1GLRC28760Yes

L8050QLT1G** is a general-purpose NPN bipolar junction transistor (BJT) manufactured by **LRC (Leshan Radio Company)**.

The L8050QLT1G is a general-purpose NPN bipolar junction transistor (BJT) manufactured by LRC (Leshan Radio Company).

Key Specifications:

  • Transistor Type: NPN
  • Package: SOT-23
  • Collector-Base Voltage (VCB): 30V
  • Collector-Emitter Voltage (VCE): 20V
  • Emitter-Base Voltage (VEB): 5V
  • Collector Current (IC): 500mA
  • Power Dissipation (PD): 225mW
  • DC Current Gain (hFE): 120-400 (typical)
  • Transition Frequency (fT): 150MHz (typical)

Descriptions & Features:

  • Designed for general-purpose amplification and switching applications.
  • High current gain with low saturation voltage.
  • Suitable for low-power and high-speed switching circuits.
  • Compact SOT-23 package for space-constrained applications.

For exact performance characteristics, refer to the official LRC datasheet.

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